Microchip has introduced Schottky diode power modules in 700, 1200 and 1700V variants. They come in a choice of packaging and current ratings, as well as in various topologies including dual diode, ...
SemiQ’s SOT-227 SiC power modules, which are tested beyond 1,400 V, target battery chargers, photovoltaic inverters, server ...
Microchip has added 700V discrete SiC mosfets and both 700V and 1.2kV discrete SiC Schottky diodes, totalling 34 parts, to its portfolio of SiC power modules. “Microchip is one of the few suppliers to ...
SemiQ’s 1200-V SiC MOSFETs can be copackaged with or without a 1200-V SiC Schottky barrier diode (SBD) in SOT-227 packages. The QSiC modules provide a breakdown voltage of >1400 V and low ...
Vishay Intertechnology VSH recently launched Gen 3 1200 V silicon carbide (SiC) Schottky diodes. The diodes boast high surge current robustness, low forward voltage drop, capacitive charge, and ...
With the increasing demand for improving system efficiencies, the development of the low loss, high current, high voltage, rugged power modules for high frequency power electronic applications is of ...
Winchester, UK – Microsemi Corporation is making silicon carbide diode upgrades standard on a large selection of its current portfolio of power modules for industrial, UPS, SMPS and motor drive ...
This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...
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