Electronic Design

Layout-Dependent Modeling Boosts CMOS Gate Density

A layout-dependent circuit-design model from Toshiba helps boost gate density and improve cost-performance in next-generation 45-nm CMOS technology. More specifically, 45-nm CMOS gate density can be 2 ...
Design-Reuse

Efficient logic optimization utilizing complementary behavior of CMOS gates

Any typical digital design style with CMOS uses complementary pairs of p-type and n-type MOSFETs for logic functions implementation. Naturally, CMOS always ought to provide INVERTED outputs like ...
Design-Reuse

Low Power Universal Gates for Approximate Computing

Density and speed of IC’s have increased exponentially for several decades, following a trend described by Moore’s Law. While it is accepted that this exponential improvement trend will end, it is ...
Electronic Design

Six MOSFETs, Four Pins Create Two-Input Combo NAND/NOR Gate

This CMOS two-input combination NAND/NOR gate is a three-input, fourpin logic gate. A p-channel enhancementtype MOSFET (Q1) and an n-channel enhancement-type MOSFET (Q4) form one complementary ...
EDN

Detect wire breaks with unusual CMOS gate circuit

CMOS devices have large input impedance with input currents on the order of 0.01nA. Adding feedback circuitry can result in a latch-like device that can be used to store bits, and also operate in a ...
EDN

Design considerations for integrated CMOS receivers

To meet the demands for the multi-band, multi-mode wireless standards in the current market, a highly integrated wireless receiver (RX) is desired. CMOS technology has become the technology of choice ...