Upcoming 14A and 10A process nodes will use high-NA EUV anamorphic scanners, which will require two stitched half-fields to achieve the equivalent wafer exposure area of previous-generation scanners, ...

Have you ever thought about how and why something was designed? Who was considered a “stakeholder” for the design? And what biases are baked within the process of designing something? These are some ...

This paper presents a new method, design for inspection (DFI) to characterize overlay. Using design-assisted voltage contrast measurement, the method enables in-line test and monitoring of process ...

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