Researchers at the Department of Energy’s (DOE) Argonne National Laboratory have discovered a new approach to detail the formation of material changes at the atomic scale and in near-real time, an ...
Advanced Defect Inspection Techniques For nFET And pFET Defectivity At 7nm Gate Poly Removal Process
During 7nm gate poly removal process, polysilicon is removed exposing both NFET and PFET fins in preparation for high-k gate oxide. If the polysilicon etch is too aggressive or the source and drain ...
Silicon Defects are extremely expensive! The cost of quality is very high in an ASIC company. Finding and correcting defects is one of the most expensive part of an ASIC development process. This cost ...
According to news reports, Samsung and TSMC are expected to enter 5nm process mass production in 2020. The competition in 5nm wafer yield and market share will be very intense. A brand new wafer ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results