A new approach has been uncovered to detail the formation of material defects at the atomic scale and in near-real time, an important step that could assist in engineering better and stronger new ...
Advanced Defect Inspection Techniques For nFET And pFET Defectivity At 7nm Gate Poly Removal Process
During 7nm gate poly removal process, polysilicon is removed exposing both NFET and PFET fins in preparation for high-k gate oxide. If the polysilicon etch is too aggressive or the source and drain ...
Silicon Defects are extremely expensive! The cost of quality is very high in an ASIC company. Finding and correcting defects is one of the most expensive part of an ASIC development process. This cost ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback